PHOTOCURRENT SPECTROSCOPY OF INTERFACE STATES AT A SEMICONDUCTOR-ELECTROLYTE JUNCTION

被引：25

作者：

CHAZALVIEL, JN

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1980年 / 127卷 / 08期

关键词：

D O I：

10.1149/1.2130008

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：1822 / 1826

页数：5

相关论文

共 9 条

[1] THE DISTRIBUTION OF POTENTIAL AT THE GERMANIUM AQUEOUS ELECTROLYTE INTERFACE
BODDY, PJ
BRATTAIN, WH
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (06) : 570 - 576
[2] SCHOTTKY-BARRIER HEIGHT AND REVERSE CURRENT OF THE N-SI-ELECTROLYTE JUNCTION
CHAZALVIEL, JN
[J]. SURFACE SCIENCE, 1979, 88 (01) : 204 - 220
[3] PHOTOTHERMAL EFFECT AT TIO2 ELECTRODES IN A PHOTOELECTROCHEMICAL CELL
DECKER, F
JULIAO, JF
ABRAMOVICH, M
[J]. APPLIED PHYSICS LETTERS, 1979, 35 (05) : 397 - 399
[4] SURFACE STATES IN SILICON FROM CHARGES IN OXIDE COATING
GOETZBERGER, A
HEINE, V
NICOLLIAN, EH
[J]. APPLIED PHYSICS LETTERS, 1968, 12 (03) : 95 - +
[5] PHOTOCURRENTS INDUCED BY SUBBANDGAP ILLUMINATION IN A TI-OXIDE FILM ELECTRODE
LASER, D
GOTTESFELD, S
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (03) : 475 - 478
[6] POTENTIAL DISTRIBUTION AND FORMATION OF SURFACE STATES AT SILICON-ELECTROLYTE INTERFACE
MEMMING, R
SCHWANDT, G
[J]. SURFACE SCIENCE, 1966, 5 (01) : 97 - &
[7] ANOMALOUS PHOTORESPONSE OF N-TIO2 ELECTRODE IN A PHOTOELECTROCHEMICAL CELL
MORISAKI, H
HARIYA, M
YAZAWA, K
[J]. APPLIED PHYSICS LETTERS, 1977, 30 (01) : 7 - 9
[8] VANDERZIEL A, 1956, NOISE, P88
[9] [No title captured]