DECHANNELLING OF FAST CHARGED-PARTICLE FROM PLANAR CHANNEL BASED ON THE STOCHASTIC-THEORY

被引:9
作者
OSHIYAMA, T
机构
关键词
D O I
10.1143/JPSJ.49.290
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:290 / 298
页数:9
相关论文
共 19 条
[1]  
Beloshitskii V. V., 1972, Soviet Physics - JETP, V35, P605
[2]  
BELOSHITSKY VV, 1972, RADIAT EFF, V13, P9
[3]  
BOHR N, 1948, DAN VIDENSK SELSK MA, V18
[4]  
BONDERUP E, 1972, RADIAT EFF, V12, P261
[5]  
Campisano S. U., 1972, Radiation Effects, V13, P157, DOI 10.1080/00337577208231175
[6]   CHANNELING OF MEV PROJECTILES IN TUNGSTEN AND SILICON [J].
DAVIES, JA ;
DENHARTOG, J ;
WHITTON, JL .
PHYSICAL REVIEW, 1968, 165 (02) :345-+
[7]  
FELDMAN LC, 1968, BNL50083 REP, P58
[8]   TEMPERATURE AND ENERGY DEPENDENCE OF PROTON DECHANNELING IN SILICON [J].
FOTI, G ;
GRASSO, F ;
QUATTROCCHI, R ;
RIMINI, E .
PHYSICAL REVIEW B-SOLID STATE, 1971, 3 (07) :2169-+
[9]   CHANNELING AND RELATED EFFECTS IN MOTION OF CHARGED-PARTICLES THROUGH CRYSTALS [J].
GEMMELL, DS .
REVIEWS OF MODERN PHYSICS, 1974, 46 (01) :129-227
[10]   FEW ANALYTICAL SOLUTIONS TO LINEAR BOLTZMANN TRANSPORT-EQUATION WITH AN APPLICATION TO CHANNELING [J].
GOLOVCHENKO, JA .
PHYSICAL REVIEW B, 1976, 13 (11) :4672-4677