CHEMICAL VAPOR-DEPOSITION OF AMORPHOUS-SILICON PREPARED FROM SIF2 GAS

被引：14

作者：

JANAI, M

WEIL, R

LEVIN, KH

PRATT, B

KALISH, R

BRAUNSTEIN, G

TEICHER, M

WOLF, M

机构：

[1] TECHNION ISRAEL INST TECHNOL,DEPT PHYS,HAIFA,ISRAEL

[2] UNIV PENN,DEPT ELECT ENGN,PHILADELPHIA,PA 19104

来源：

JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 05期

关键词：

D O I：

10.1063/1.329096

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3622 / 3624

页数：3

共 16 条

[1]

ANDERSON HH, 1977, HYDROGEN STOPPING PO, V3

[2] AMORPHOUS-SILICON PHOTODETECTOR FOR PICOSECOND PULSES [J].

AUSTON, DH ;

LAVALLARD, P ;

SOL, N ;

KAPLAN, D .

APPLIED PHYSICS LETTERS, 1980, 36 (01) :66-68

[3] INFLUENCE OF ALKALI AND HALOGEN IMPLANTATION ON ELECTRICAL-PROPERTIES OF AMORPHOUS-SILICON [J].

BEYER, W ;

STRITZKER, B ;

WAGNER, H .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) :321-326

[4]

BOYD H, 1979, SOLID STATE TECHNOL, V22, P133

[5] NEGATIVE-U STATES IN GAP IN HYDROGENATED AMORPHOUS SILICON [J].

FISCH, R ;

LICCIARDELLO, DC .

PHYSICAL REVIEW LETTERS, 1978, 41 (13) :889-891

[6] GENERAL EXPRESSION FOR THERMOELECTRIC POWER [J].

FRITZSCHE, H .

SOLID STATE COMMUNICATIONS, 1971, 9 (21) :1813-+

[7]

INGLE WM, 1976, 2257122578 MOT Q REP

[8] OPTICAL-PROPERTIES AND STRUCTURE OF AMORPHOUS SILICON FILMS PREPARED BY CVD [J].

JANAI, M ;

ALLRED, DD ;

BOOTH, DC ;

SERAPHIN, BO .

SOLAR ENERGY MATERIALS, 1979, 1 (1-2) :11-27

[9] AMORPHOUS SI-F-H SOLAR-CELLS PREPARED BY DC GLOW-DISCHARGE [J].

KONAGAI, M ;

TAKAHASHI, K .

APPLIED PHYSICS LETTERS, 1980, 36 (07) :599-601

[10] INFLUENCE OF HALIDES ON THE PHOTOCONDUCTIVITY, DARK CONDUCTIVITY AND PHOTO-LUMINESCENCE OF A-SI-H [J].

KRUEHLER, WW ;

PLAETTNER, RD ;

MOELLER, M ;

RAUSCHER, B ;

STETTER, W .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) :333-338

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