INFLUENCE OF ALKALI AND HALOGEN IMPLANTATION ON ELECTRICAL-PROPERTIES OF AMORPHOUS-SILICON

被引：19

作者：

BEYER, W

STRITZKER, B

WAGNER, H

机构：

[1] FORSCHUNGSZENTRUM JULICH, INST FESTKORPERFORSCH, D-5170 JULICH 1, FED REP GER

[2] UNIV MARBURG, FACHBEREICH PHYS, D-3550 MARBURG, FED REP GER

来源：

关键词：

D O I：

10.1016/0022-3093(80)90614-6

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：321 / 326

页数：6

共 15 条

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