APPLICATION OF PENNING DISCHARGE TO THE DEPOSITION OF AMORPHOUS-SILICON

被引：7

作者：

HIRAO, T

MORI, K

KITAGAWA, M

ISHIHARA, S

OHNO, M

NAGATA, S

WATANABE, M

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 12期

关键词：

D O I：

10.1063/1.328742

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：7453 / 7455

页数：3

共 10 条

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ANDERSON, DA ;

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[2]

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[3] AMORPHOUS SILICON SOLAR-CELL [J].

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WRONSKI, CR .

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[4]

CARLSON DE, 1977, Patent No. 4061521

[5]

IIZIMA S, 1979, 3RD P INT C SOL STAT

[6] MECHANISM OF PENNING DISCHARGE AT LOW PRESSURES [J].

KNAUER, W .

JOURNAL OF APPLIED PHYSICS, 1962, 33 (06) :2093-&

[7]

MADAN A, 1980, JUL TRIEST SEM S

[8]

OKAMOTO H, 1980, 8TH P INT C AM LIQ S

[9]

TANIGUCHI M, 1979, 8TH P INT C AM LIQ S

[10]

TAWADA Y, 1980, 2ND PHOT SCI ENG C J, P75

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