AN A-SI-H/A-SI, GE-H BULK BARRIER PHOTOTRANSISTOR WITH A-SIC-H BARRIER ENHANCEMENT LAYER FOR HIGH-GAIN IR OPTICAL-DETECTOR

被引：26

作者：

HWANG, SB

FANG, YK

CHEN, KH

LIU, CR

HWANG, JD

CHOU, MH

机构：

[1] VLSI Technology Laboratory, National Cheng Kung University, Tainan, ROC

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1993年 / 40卷 / 04期

关键词：

D O I：

10.1109/16.202783

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, the design and fabrication of a high-gain amorphous silicon/amorphous silicon germanium (a-Si:H/a-Si,Ge:H) bulk barrier phototransistor for infrared light detection application are reported. The a-Si,Ge:H material featured lower energy gap and is suitable for the absorption of longer wave light, but it also leads to a low breakdown voltage and high dark current. We used an additional a-SiC: H thin-film layer at the collector/base interface in the conventional amorphous bulk barrier phototransistor to enhance the function of bulk barrier and obtain high optical gain.

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收藏

页码：721 / 726

页数：6

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