AN AMORPHOUS SIC/SI HETEROJUNCTION P-I-N-DIODE FOR LOW-NOISE AND HIGH-SENSITIVITY UV DETECTOR

被引：43

作者：

FANG, YK

HWANG, SB

CHEN, KH

LIU, CR

TSAI, MJ

KUO, LC

机构：

[1] IND TECHNOL RES INST,MAT RES LABS,HSINCHU,TAIWAN

[2] NATL CHENG KUNG UNIV,INST ELECT ENGN,TAINAN,TAIWAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1992年 / 39卷 / 02期

关键词：

D O I：

10.1109/16.121685

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports the UV photoresponse of an a-SiC/a-Si heterojunction p-i-n diode. The diode has been designed specially for high-sensitivity and low-noise UV detector. Enhancements are proposed to raise UV response and suppress long-wave responsivity. Besides, the diode is designed to be operated under zero external bias to suppress the dark-current-induced noise. Results show a 200% higher UV sensitivity than GaAsP Schottky photodiode in the 200-400-nm wavelength region.

引用

页码：292 / 296

页数：5

共 16 条

[1] THE AMORPHOUS SI/SIC HETEROJUNCTION COLOR-SENSITIVE PHOTOTRANSISTOR [J].