AN AMORPHOUS SIC/SI HETEROJUNCTION P-I-N-DIODE FOR LOW-NOISE AND HIGH-SENSITIVITY UV DETECTOR

被引:43
作者
FANG, YK
HWANG, SB
CHEN, KH
LIU, CR
TSAI, MJ
KUO, LC
机构
[1] IND TECHNOL RES INST,MAT RES LABS,HSINCHU,TAIWAN
[2] NATL CHENG KUNG UNIV,INST ELECT ENGN,TAINAN,TAIWAN
关键词
D O I
10.1109/16.121685
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper reports the UV photoresponse of an a-SiC/a-Si heterojunction p-i-n diode. The diode has been designed specially for high-sensitivity and low-noise UV detector. Enhancements are proposed to raise UV response and suppress long-wave responsivity. Besides, the diode is designed to be operated under zero external bias to suppress the dark-current-induced noise. Results show a 200% higher UV sensitivity than GaAsP Schottky photodiode in the 200-400-nm wavelength region.
引用
收藏
页码:292 / 296
页数:5
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