STABLE, HIGH QUANTUM EFFICIENCY, UV-ENHANCED SILICON PHOTODIODES BY ARSENIC DIFFUSION

被引：53

作者：

KORDE, R ^{[1
]}

GEIST, J ^{[1
]}

机构：

[1] NBS,GAITHERSBURG,MD 20899

来源：

SOLID-STATE ELECTRONICS | 1987年 / 30卷 / 01期

关键词：

DIFFUSED PHOTODIODE - LONG TERM STABILITY - QUANTUM EFFICIENCY - RESPONSIVITY - SILICON PHOTODIODES;

D O I：

10.1016/0038-1101(87)90034-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

(Edited Abstract)

引用

页码：89 / 92

页数：4

共 24 条

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