RESPONSE-TIME AND LINEARITY OF INVERSION LAYER SILICON PHOTODIODES

被引：7

作者：

GARDNER, JL

WILKINSON, FJ

机构：

来源：

APPLIED OPTICS | 1985年 / 24卷 / 10期

关键词：

D O I：

10.1364/AO.24.001531

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

引用

页码：1531 / 1534

页数：4

共 10 条

[1] INDUCED JUNCTION (INVERSION LAYER) PHOTODIODE SELF-CALIBRATION [J].

BOOKER, RL ;

GEIST, J .

APPLIED OPTICS, 1984, 23 (12) :1940-1945

[2] COMPLETE COLLECTION OF MINORITY-CARRIERS FROM THE INVERSION LAYER IN INDUCED JUNCTION DIODES [J].

GEIST, J ;

LIANG, E ;

SCHAEFER, AR .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (07) :4879-4881

[3] SILICON PHOTO-DIODE FRONT REGION COLLECTION EFFICIENCY MODELS [J].

GEIST, J .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (07) :3993-3995

[4] SILICON UV-PHOTODIODES USING NATURAL INVERSION LAYERS [J].

HANSEN, TE .

PHYSICA SCRIPTA, 1978, 18 (06) :471-475

[5] TEMPORARY TRAPS IN SILICON AND GERMANIUM [J].

HAYNES, JR ;

HORNBECK, JA .

PHYSICAL REVIEW, 1953, 90 (01) :152-153

[6] SILICON DETECTOR NONLINEARITY AND RELATED EFFECTS [J].

SCHAEFER, AR ;

ZALEWSKI, EF ;

GEIST, J .

APPLIED OPTICS, 1983, 22 (08) :1232-1236

[7] MEASUREMENT OF CARRIER LIFETIMES IN GERMANIUM AND SILICON [J].

STEVENSON, DT ;

KEYES, RJ .

JOURNAL OF APPLIED PHYSICS, 1955, 26 (02) :190-195

[8]

TONGBAO L, 1982, 10TH P IMEKO S PHOT, P61

[9]

WILKINSON FJ, UNPUB STABILITY SILI

[10] SILICON PHOTO-DIODE DEVICE WITH 100-PERCENT EXTERNAL QUANTUM EFFICIENCY [J].

ZALEWSKI, EF ;

DUDA, CR .

APPLIED OPTICS, 1983, 22 (18) :2867-2873

← 1 →