SILICON PHOTO-DIODE DEVICE WITH 100-PERCENT EXTERNAL QUANTUM EFFICIENCY

被引:212
作者
ZALEWSKI, EF [1 ]
DUDA, CR [1 ]
机构
[1] UNITED DETECTOR TECHNOL,HAWTHORNE,CA 90250
来源
APPLIED OPTICS | 1983年 / 22卷 / 18期
关键词
D O I
10.1364/AO.22.002867
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
引用
收藏
页码:2867 / 2873
页数:7
相关论文
共 20 条
[1]  
BORN M, 1965, PRINCIPLES OPTICS, P632
[2]   MULTI-DECADE LINEARITY MEASUREMENTS ON SI PHOTO-DIODES [J].
BUDDE, W .
APPLIED OPTICS, 1979, 18 (10) :1555-1558
[3]   LARGE-FLUX-RATIO LINEARITY MEASUREMENTS ON SI PHOTO-DIODES [J].
BUDDE, W .
APPLIED OPTICS, 1982, 21 (20) :3699-3701
[4]  
FOWLER JB, 1979, NBS987 US TECH NOT
[5]   COMPLETE COLLECTION OF MINORITY-CARRIERS FROM THE INVERSION LAYER IN INDUCED JUNCTION DIODES [J].
GEIST, J ;
LIANG, E ;
SCHAEFER, AR .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (07) :4879-4881
[6]   ELIMINATION OF INTERFACE RECOMBINATION IN OXIDE PASSIVATED SILICON P+N PHOTO-DIODES BY STORAGE OF NEGATIVE CHARGE ON THE OXIDE SURFACE [J].
GEIST, J ;
FARMER, AJD ;
MARTIN, PJ ;
WILKINSON, FJ ;
COLLOCOTT, SJ .
APPLIED OPTICS, 1982, 21 (06) :1130-1135
[7]   SPECTRAL RESPONSE SELF-CALIBRATION AND INTERPOLATION OF SILICON PHOTO-DIODES [J].
GEIST, J ;
ZALEWSKI, EF ;
SCHAEFER, AR .
APPLIED OPTICS, 1980, 19 (22) :3795-3799
[8]   QUANTUM YIELD OF SILICON IN THE VISIBLE [J].
GEIST, J ;
ZALEWSKI, EF .
APPLIED PHYSICS LETTERS, 1979, 35 (07) :503-506
[9]   SILICON PHOTO-DIODE FRONT REGION COLLECTION EFFICIENCY MODELS [J].
GEIST, J .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (07) :3993-3995
[10]   PHYSICS OF PHOTON-FLUX MEASUREMENTS WITH SILICON PHOTO-DIODES [J].
GEIST, J ;
GLADDEN, WK ;
ZALEWSKI, EF .
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1982, 72 (08) :1068-1075