QUANTUM YIELD OF SILICON IN THE VISIBLE

被引：27

作者：

GEIST, J

ZALEWSKI, EF

机构：

[1] Radiometric Physics Division, National Bureau of Standards, Washington

来源：

APPLIED PHYSICS LETTERS | 1979年 / 35卷 / 07期

关键词：

D O I：

10.1063/1.91187

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Extremely high accuracy measurements of the internal quantum efficiency of shallow-junction silicon photodetectors were fit with various theoretical models. The internal quantum efficiency was found to be rather model independent indicating its possible use as a radiometric standard. The results of this investigation indicate that the quantum yield of silicon is unity to within a few tenths of one percent in the visible.

引用

页码：503 / 506

页数：4

共 24 条

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