ELIMINATION OF INTERFACE RECOMBINATION IN OXIDE PASSIVATED SILICON P+N PHOTO-DIODES BY STORAGE OF NEGATIVE CHARGE ON THE OXIDE SURFACE

被引：18

作者：

GEIST, J ^{[1
]}

FARMER, AJD ^{[1
]}

MARTIN, PJ ^{[1
]}

WILKINSON, FJ ^{[1
]}

COLLOCOTT, SJ ^{[1
]}

机构：

[1] CSIRO,DIV APPL PHYS,SYDNEY 22070,AUSTRALIA

来源：

APPLIED OPTICS | 1982年 / 21卷 / 06期

关键词：

D O I：

10.1364/AO.21.001130

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

引用

页码：1130 / 1135

页数：6

共 12 条

[1] COMPLETE COLLECTION OF MINORITY-CARRIERS FROM THE INVERSION LAYER IN INDUCED JUNCTION DIODES [J].

GEIST, J ;

LIANG, E ;

SCHAEFER, AR .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (07) :4879-4881

[2] SPECTRAL RESPONSE SELF-CALIBRATION AND INTERPOLATION OF SILICON PHOTO-DIODES [J].

GEIST, J ;

ZALEWSKI, EF ;

SCHAEFER, AR .

APPLIED OPTICS, 1980, 19 (22) :3795-3799

[3] SILICON PHOTO-DIODE FRONT REGION COLLECTION EFFICIENCY MODELS [J].

GEIST, J .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (07) :3993-3995

[4] SILICON UV-PHOTODIODES USING NATURAL INVERSION LAYERS [J].

HANSEN, TE .

PHYSICA SCRIPTA, 1978, 18 (06) :471-475

[5]

LAM YW, 1981, APPL PHYS LETT, V37, P1087

[6] THEORY OF THE ELECTRONIC-STRUCTURE OF THE SI-SIO2 INTERFACE [J].

LAUGHLIN, RB ;

JOANNOPOULOS, JD ;

CHADI, DJ .

PHYSICAL REVIEW B, 1980, 21 (12) :5733-5744

[7] OPTIMIZATION OF AN ELECTRON-BOMBARDMENT ION-SOURCE FOR ION MACHINING APPLICATIONS [J].

READER, PD ;

KAUFMAN, HR .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (06) :1344-1347

[8] INSTRUMENT FOR ABSOLUTE MEASUREMENT OF DIRECT SPECTRAL REFLECTANCES AT NORMAL INCIDENCE [J].

SHAW, JE ;

BLEVIN, WR .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1964, 54 (03) :334-&

[9] PROPERTIES OF VERY THIN RF SPUTTERED TRANSPARENT CONDUCTING FILMS OF SNO2 - SB AND IN2O3 - SN [J].

VOSSEN, JL ;

POLINIAK, ES .

THIN SOLID FILMS, 1972, 13 (02) :281-284

[10]

WILKINSON F, UNPUB

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