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SILICON DETECTOR NONLINEARITY AND RELATED EFFECTS

被引：53
作者：
SCHAEFER, AR
ZALEWSKI, EF
GEIST, J
机构：
来源：
APPLIED OPTICS | 1983年 / 22卷 / 08期
关键词：
D O I：
10.1364/AO.22.001232
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
引用
收藏
页码：1232 / 1236
页数：5
相关论文
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  • [2] ELIMINATION OF INTERFACE RECOMBINATION IN OXIDE PASSIVATED SILICON P+N PHOTO-DIODES BY STORAGE OF NEGATIVE CHARGE ON THE OXIDE SURFACE
    GEIST, J
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  • [3] SPECTRAL RESPONSE SELF-CALIBRATION AND INTERPOLATION OF SILICON PHOTO-DIODES
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    ZALEWSKI, EF
    SCHAEFER, AR
    [J]. APPLIED OPTICS, 1980, 19 (22): : 3795 - 3799
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    WEAKLIEM, HA
    REDFIELD, D
    [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (03) : 1491 - 1493
  • [8] SILICON PHOTO-DIODE ABSOLUTE SPECTRAL RESPONSE SELF-CALIBRATION
    ZALEWSKI, EF
    GEIST, J
    [J]. APPLIED OPTICS, 1980, 19 (08): : 1214 - 1216
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