NEW PROFILED SILICON PHOTODETECTOR FOR IMPROVED SHORT-WAVELENGTH QUANTUM EFFICIENCY

被引：14

作者：

CHAMBERLAIN, SG ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF APPLIED PHYSICS | 1979年 / 50卷 / 11期

关键词：

D O I：

10.1063/1.325835

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new silicon-profiled ion-implanted n+-n--p photodetector structure was developed for improved quantum efficiency in the visible spectrum. This device offers a significantly improved blue color response and it is compatible with CCD and MOSFET technologies. Experimental results show that the new device offers a quantum efficiency of more than 80% at 4000-Å wavelength relative to less than 1% quantum efficiency which a conventional n+-p silicon photodiode offers at the same wavelength. In addition, the present new device offers a flat quantum efficiency of more than 80% in the ultraviolet and entire visible spectrum (3800≤λ≤ 8000 Å). Also, the present device can be used as an efficient silicon solar cell.

引用

页码：7228 / 7231

页数：4

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