SELF-CONSISTENT CALCULATION OF EFFECTIVE INTRINSIC CONCENTRATION IN HEAVILY DOPED SILICON

被引：9

作者：

HEASELL, EL ^{[1
]}

机构：

[1] UNIV WATERLOO, FAC ENGN, DEPT ELECT ENGN, WATERLOO N2L 3G1, ONTARIO, CANADA

来源：

INTERNATIONAL JOURNAL OF ELECTRONICS | 1975年 / 38卷 / 01期

关键词：

D O I：

10.1080/00207217508920382

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：127 / 135

页数：9

共 19 条

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[9] CALCULATION OF CARRIER CONCENTRATIONS IN SILICON IN MEDIUM AND HIGH-TEMPERATURE REGIONS [J].

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[10] THOMAS-FERMI APPROACH TO IMPURE SEMICONDUCTOR BAND STRUCTURE [J].

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