CALCULATION OF CARRIER CONCENTRATIONS IN SILICON IN MEDIUM AND HIGH-TEMPERATURE REGIONS

被引：6

作者：

HEASELL, EL ^{[1
]}

机构：

[1] UNIV WATERLOO,ELECT ENGN DEPT,WATERLOO,ONTARIO,CANADA

来源：

SOLID-STATE ELECTRONICS | 1973年 / 16卷 / 05期

关键词：

D O I：

10.1016/0038-1101(73)90170-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：651 / 655

页数：5

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