MEASUREMENT OF THE HALL EFFECT AND CONDUCTIVITY OF SUPER-PURE SILICON

被引：13

作者：

HOFFMANN, A

REUSCHEL, K

RUPPRECHT, H

机构：

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1959年 / 11卷 / 3-4期

关键词：

D O I：

10.1016/0022-3697(59)90228-8

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：284 / 287

页数：4

共 17 条

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[2]

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[4]

HERLET A, 1957, Z ANGEW PHYS, V9, P155

[5] ZUR LEITFAHIGKEIT DES SILICIUMS [J].

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ZERBST, M ;

BISCHOFF, F .

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[6]

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[7]

Holbling R., 1927, Z ANGEW CHEM, V40, P655

[8] CRYSTALLIZATION OF SILICON FROM A FLOATING LIQUID ZONE [J].

KECK, PH ;

GOLAY, MJE .

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[9] DRIFT AND CONDUCTIVITY MOBILITY IN SILICON [J].

LUDWIG, GW ;

WATTERS, RL .

PHYSICAL REVIEW, 1956, 101 (06) :1699-1701

[10] ELECTRICAL PROPERTIES OF SILICON CONTAINING ARSENIC AND BORON [J].

MORIN, FJ ;

MAITA, JP .

PHYSICAL REVIEW, 1954, 96 (01) :28-35

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