AMORPHOUS-SILICON SILICON-CARBIDE SUPERLATTICE AVALANCHE PHOTODIODES

被引：38

作者：

JWO, SC ^{[1
]}

WU, MT ^{[1
]}

FANG, YK ^{[1
]}

CHEN, YW ^{[1
]}

HONG, JW ^{[1
]}

CHANG, CY ^{[1
]}

机构：

[1] NATL CHIAO TUNG UNIV,INST ELECTR,HSINCHU,TAIWAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 08期

关键词：

D O I：

10.1109/16.2548

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1279 / 1288

页数：10

共 16 条

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[8] OPTICAL AND ELECTRICAL-CURRENT GAIN IN AN AMORPHOUS-SILICON BULK BARRIER PHOTOTRANSISTOR [J].

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[10] THE AMORPHOUS SI/SIC HETEROJUNCTION COLOR-SENSITIVE PHOTOTRANSISTOR [J].

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