X-BAND SILICON DOUBLE-DRIFT IMPATT DIODES USING MULTIPLE EPITAXY

被引：9

作者：

YING, RS

机构：

来源：

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1972年 / 60卷 / 09期

关键词：

D O I：

10.1109/PROC.1972.8861

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1104 / &

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EVANS, WJ ;

JOHNSTON, RL .

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[4] DOUBLE-DRIFT-REGION ION-IMPLANTED MILLIMETER-WAVE IMPATT DIODES [J].

SEIDEL, TE ;

DAVIS, RE ;

IGLESIAS, DE .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1971, 59 (08) :1222-+

SEIDEL, TE ;

SCHARFET.DL .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (07) :1135-&