DOUBLE-DRIFT-REGION ION-IMPLANTED MILLIMETER-WAVE IMPATT DIODES

被引:50
作者
SEIDEL, TE
DAVIS, RE
IGLESIAS, DE
机构
来源
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1971年 / 59卷 / 08期
关键词
D O I
10.1109/PROC.1971.8368
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1222 / +
页数:1
相关论文
共 25 条
[1]   THIN SKIN IMPATTS [J].
DELOACH, BC .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1970, MT18 (01) :72-&
[2]  
EDWARDS R, 1969, OCT IEEE INT EL DEV
[3]   A NOVEL TRAPATT OSCILLATOR DESIGN [J].
EVANS, WJ ;
SEIDEL, TE ;
SCHARFET.DL .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (08) :1294-&
[4]   COMPUTER EXPERIMENTS ON TRAPATT DIODES [J].
EVANS, WJ .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1970, MT18 (11) :862-+
[5]   ION IMPLANTATION IN SEMICONDUCTORS .I. RANGE DISTRIBUTION THEORY AND EXPERIMENTS [J].
GIBBONS, JF .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (03) :295-+
[6]   IONIZATION RATES OF HOLES + ELECTRONS IN SILICON [J].
LEE, CA ;
KLEIMACK, JJ ;
BATDORF, RL ;
WIEGMANN, W ;
LOGAN, RA .
PHYSICAL REVIEW, 1964, 134 (3A) :A761-+
[7]   BEAM-LEAD TECHNOLOGY [J].
LEPSELTE.MP .
BELL SYSTEM TECHNICAL JOURNAL, 1966, 45 (02) :233-&
[8]   THIN SILICON DEVICE TECHNOLOGY [J].
MASH, DH ;
HENSHALL, GD ;
EALES, BA .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1970, 3 (08) :1199-+
[9]   CW MILLIMETER-WAVE IMPATT DIODES WITH NEARLY ABRUPT JUNCTIONS [J].
MISAWA, T .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (02) :234-+
[10]  
MOLINE RA, 1971, J APPL PHYS