CW MILLIMETER-WAVE IMPATT DIODES WITH NEARLY ABRUPT JUNCTIONS

被引：21

作者：

MISAWA, T

机构：

[1] Bell Telephone Laboratories, Inc., Murray Hill, N.J.

来源：

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1968年 / 56卷 / 02期

关键词：

D O I：

10.1109/PROC.1968.6254

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Output powers of 23 to 150 mW were obtained from silicon avalanche diodes with a nearly abrupt junction in the 50-to 84-GHz range in continuous operation. The maximum efficiency was about 3 percent. Copyright © 1968 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：234 / +

页数：1

共 8 条

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BOWMAN, LS ;

BURRUS, CA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (08) :411-+

[2] MILLIMETER-WAVE OSCILLATIONS FROM AVALANCHING P-N JUNCTIONS IN SILICON [J].

BURRUS, CA .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (09) :1256-&

[3]

DELOACH BC, PRIVATE COMMUNICATIO

[4] MULTIPLE UNIFORM LAYER APPROXIMATION IN ANALYSIS OF NEGATIVE RESISTANCE IN P-N JUNCTION IN BREAKDOWN [J].

MISAWA, T .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (12) :795-+

[5] MICROWAVE SI AVALANCHE DIODE WITH NEARLY-ABRUPT-TYPE JUNCTION [J].

MISAWA, T .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (09) :580-+

[6] NEGATIVE RESISTANCE IN P-N JUNCTIONS UNDER AVALANCHE BREAKDOWN CONDITIONS .I. [J].

MISAWA, T .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) :137-+

[7]

MISAWA T, 1966, IEEE T ELECTRON DEV, VED13, P143, DOI 10.1109/T-ED.1966.15648

[8]

SWAN CB, PRIVATE COMMUNICATIO

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