COMPUTER EXPERIMENTS ON TRAPATT DIODES

被引：25

作者：

EVANS, WJ

机构：

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1970年 / MT18卷 / 11期

关键词：

D O I：

10.1109/TMTT.1970.1127363

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：862 / +

页数：1

共 16 条

[1]

CLORFEINE AS, 1969, RCA REV, V30, P397

[2] DEVICE PHYSICS OF TRAPATT OSCILLATORS [J].

DELOACH, BC ;

SCHARFETTER, DL .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (01) :9-+

[3]

DUNN CN, UNPUBLISHED WORK

[4]

EDWARDS R, 1969 INT EL DEV M WA

[5] CIRCUITS FOR HIGH-EFFICIENCY AVALANCHE-DIODE OSCILLATORS [J].

EVANS, WJ .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1969, MT17 (12) :1060-+

[6]

EVANS WJ, 1970, IEEE P, V58, P1294

[7]

GIBBONS G, 1970, IEEE P, V58, P512

[8] HIGH-EFFICIENCY OSCILLATIONS IN GERMANIUM AVALANCHE DIODES BELOW TRANSIT-TIME FREQUENCY [J].

JOHNSTON, RL ;

SCHARFET.DL ;

BARTELIN.DJ .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (09) :1611-+

[9] HIGH-POWER HIGH-EFFICIENCY SILICON AVALANCHE DIODES AT ULTRA HIGH FREQUENCIES [J].

PRAGER, HJ ;

CHANG, KKN ;

WEISBROD, S .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (04) :586-+

[10] A PROPOSED HIGH-FREQUENCY, NEGATIVE-RESISTANCE DIODE [J].

READ, WT .

BELL SYSTEM TECHNICAL JOURNAL, 1958, 37 (02) :401-446

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