DEVICE PHYSICS OF TRAPATT OSCILLATORS

被引：71

作者：

DELOACH, BC

SCHARFETTER, DL

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1970年 / ED17卷 / 01期

关键词：

D O I：

10.1109/T-ED.1970.16917

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：9 / +

页数：1

共 16 条

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SCHARFETTER, DL .

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[4]

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[5]

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LIU SG, 1968, FEB INT SOC STAT CIR

[8] NEGATIVE RESISTANCE AND FILAMENTARY CURRENTS IN AVALANCHING SILICON P+-I-N+ JUNCTIONS [J].

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GUCKEL, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (08) :560-+

[9] HIGH-POWER HIGH-EFFICIENCY SILICON AVALANCHE DIODES AT ULTRA HIGH FREQUENCIES [J].

PRAGER, HJ ;

CHANG, KKN ;

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[10]

PRAGER HJ, 1967, AUG P CORN C HIGH FR, P266

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