NEGATIVE RESISTANCE AND FILAMENTARY CURRENTS IN AVALANCHING SILICON P+-I-N+ JUNCTIONS

被引:39
作者
MULLER, MW
GUCKEL, H
机构
[1] Department of Electrical Engineering and the Computer Components Laboratory Washington University, St. Louis
关键词
D O I
10.1109/T-ED.1968.16403
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Space-charge effects in avalanching p+ -i-n+ diodes give rise to a current-controlled bulk negative resistance. It is shown that this negative resistance gives rise to an instability which tends to lead to the formation of current filaments. A steady state can be found in which the generation of carriers in the filament by impact ionization is balanced by radial diffusion of carriers. We present the results of approximate numerical calculations of filament current-density profiles and total filament current as a function of applied voltage. The total filament current is a decreasing function of the applied voltage; thus, the diode exhibits a quasistatic negative external resistance. It is suggested that this negative resistance may be used to interpret observed sub-transit-time oscillations of P+-i-n+ structures. Copyright © 1968 by The Institute of Electrical and Electronics Engineers, Inc.
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页码:560 / +
页数:1
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