AVALANCHE INJECTION DIODES

被引：44

作者：

GIBSON, AF

MORGAN, JR

机构：

来源：

关键词：

D O I：

10.1016/0038-1101(60)90057-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：54 / 69

页数：16

共 12 条

[1] GIBSON AF, 1957, Patent No. 29800
[2] GIBSON AF, 1956, J ELECTRON, V2, P259
[3] GUNN JB, 1957, PROGRESS SEMICONDUCT, V2, P213
[4] GUNN JB, 1956, P PHYS SOC LOND B, V66, P781
[5] GUNN JB, 1956, J ELECTRONICS, V2, P88
[6] TRANSPORT PROPERTIES OF A MANY-VALLEY SEMICONDUCTOR
HERRING, C
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1955, 34 (02): : 237 - 290
[7] MASON DE, 1958, PROGR SEMICONDUCTORS, V3, P85
[8] AVALANCHE BREAKDOWN IN SILICON
MCKAY, KG
[J]. PHYSICAL REVIEW, 1954, 94 (04): : 877 - 884
[9] AVALANCHE BREAKDOWN IN GERMANIUM
MILLER, SL
[J]. PHYSICAL REVIEW, 1955, 99 (04): : 1234 - 1241
[10] MOBILITY OF HOLES AND ELECTRONS IN HIGH ELECTRIC FIELDS
RYDER, EJ
[J]. PHYSICAL REVIEW, 1953, 90 (05): : 766 - 769