CURRENT FILAMENTS IN AVALANCHING PIN DIODES

被引：8

作者：

MULLER, MW

机构：

[1] Department of Electrical Engineering, Computer Components Laboratory, Washington University, St. Louis

来源：

APPLIED PHYSICS LETTERS | 1968年 / 12卷 / 06期

关键词：

D O I：

10.1063/1.1651960

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It is predicted that stable current filaments can be formed in an avalanching pin structure. The current density in a filament and its radius are determined by a dynamic equilibrium between carrier production by impact ionization and loss of carriers by diffusion. © 1968 The American Institute of Physics.

引用

页码：218 / &

共 7 条

[1] AVALANCHE INJECTION DIODES
GIBSON, AF
MORGAN, JR
[J]. SOLID-STATE ELECTRONICS, 1960, 1 (01) : 54 - 69
[2] GIBSON AF, 1957, PROGRESS SEMICOND ED, V2
[3] GUNN JB, 1957, PROGRESS SEMICONDUCT, V2
[4] HOEFFLINGER B, 1966, T IEEE, VED13, P151
[5] PRAGER HJ, 1967 C EL DEV RES MO
[6] SPECIFIC NEGATIVE RESISTANCE IN SOLIDS
RIDLEY, BK
[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1963, 82 (530): : 954 - &
[7] MICROPLASMAS IN SILICON
ROSE, DJ
[J]. PHYSICAL REVIEW, 1957, 105 (02): : 413 - 418

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