HIGH-GREQUENCY OSCILLATIONS OF P++-N+-N-N++ AVALANCHE DIODES BELOW TRANSIT-TIME CUTOFF

被引:26
作者
HOEFFLINGER, B
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D O I
10.1109/T-ED.1966.15649
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TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:151 / +
页数:1
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共 19 条
[1]   THRESHOLD ENERGY FOR ELECTRON-HOLE PAIR-PRODUCTION BY ELECTRONS IN SILICON [J].
CHYNOWETH, AG ;
MCKAY, KG .
PHYSICAL REVIEW, 1957, 108 (01) :29-34
[2]  
GAERTNER WW, 1961, P IRE, V49, P754
[3]   AVALANCHE INJECTION DIODES [J].
GIBSON, AF ;
MORGAN, JR .
SOLID-STATE ELECTRONICS, 1960, 1 (01) :54-69
[4]  
GIBSON AF, 1957, PROGRESS SEMICOND ED, V2, P213
[5]   AVALANCHE INJECTION IN SEMICONDUCTORS [J].
GUNN, JB .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1956, 69 (08) :781-790
[6]  
GUNN JB, 1957, PROGRESS SEMICONDUCT, V2, P213
[7]   AVALANCHE EFFECTS IN SILICON P-N JUNCTIONS .1. LOCALIZED PHOTOMULTIPLICATION STUDIES ON MICROPLASMAS [J].
HAITZ, RH ;
GOETZBERGER, A ;
SCARLETT, RM ;
SHOCKLEY, W .
JOURNAL OF APPLIED PHYSICS, 1963, 34 (06) :1581-&
[8]   A SILICON DIODE MICROWAVE OSCILLATOR [J].
JOHNSTON, RL ;
DELOACH, BC ;
COHEN, BG .
BELL SYSTEM TECHNICAL JOURNAL, 1965, 44 (02) :369-+
[9]  
LADE RW, 1960, P IRE, V48, P940
[10]  
LEBLOND A, 1956, CR HEBD ACAD SCI, V242, P1856