ALKOXIDE PRECURSORS FOR CONTROLLED OXYGEN INCORPORATION DURING METALORGANIC VAPOR-PHASE EPITAXY GAAS AND ALXGA1-XAS GROWTH

被引：23

作者：

HUANG, JW

GAINES, DF

KUECH, TF

POTEMSKI, RM

CARDONE, F

机构：

[1] UNIV WISCONSIN,DEPT CHEM,MADISON,WI 53706

[2] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1994年 / 23卷 / 07期

关键词：

ALXGA1-XAS; DEEP LEVELS; DOPING; GROWTH CHEMISTRY; METALORGANIC VAPOR PHASE EPITAXY (MOVPE); OXYGEN;

D O I：

10.1007/BF02653353

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Controlled oxygen incorporation in GaAs using Al-O bonding based precursors, dimethyl aluminum methoxide (DMALO) and diethyl aluminum ethoxide (DEALO), is presented in this investigation. A comparison study of oxygen incorporation kinetics between nominally undoped AlxGa1-xAs using trimethyl aluminum and DMALO-doped GaAs suggests that DMALO is one of the most important oxygen-bearing agents responsible for unintentional oxygen incorporation in AlxGa1-xAs. Controlled oxygen doping using DEALO is reported for the first time. Oxygen incorporation behavior, especially on the effect of the V/III ratio, was found to be quite different from the case of DMALO, mainly due to the differences between methyl- and ethyl-based growth chemistries. Physical, electrical, and optical properties of these oxygen-doped GaAs are also reported.

引用

页码：659 / 667

页数：9