NEGATIVE RESISTANCE AND HIGH ELECTRIC FIELD CAPTURE RATES IN SEMICONDUCTORS

被引:76
作者
RIDLEY, BK
WATKINS, TB
机构
关键词
D O I
10.1016/0022-3697(61)90256-6
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
引用
收藏
页码:155 / 158
页数:4
相关论文
共 6 条
[1]   CARRIER CAPTURE PROBABILITIES IN NICKEL DOPED GERMANIUM [J].
BATTEY, JF ;
BAUM, RM .
PHYSICAL REVIEW, 1955, 100 (06) :1634-1637
[2]  
CONWELL EM, 1961, J PHYS CHEM SOLIDS, V17, P342
[3]   INFRARED PROPERTIES OF GOLD IN GERMANIUM [J].
JOHNSON, L ;
LEVINSTEIN, H .
PHYSICAL REVIEW, 1960, 117 (05) :1191-1203
[4]  
PEKAR SJ, 1951, ABHANDLUNGEN SOWJETI, V1, P47
[5]   POSSIBILITY OF NEGATIVE RESISTANCE EFFECTS IN SEMICONDUCTORS [J].
RIDLEY, BK ;
WATKINS, TB .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1961, 78 (500) :293-&
[6]   COPPER IN GERMANIUM - RECOMBINATION CENTER AND TRAPPING CENTER [J].
SHULMAN, RG ;
WYLUDA, BJ .
PHYSICAL REVIEW, 1956, 102 (06) :1455-1457