ETCHING OF SILICON NITRIDE IN PHOSPHORIC ACID WITH SILICON DIOXIDE AS A MASK

被引：108

作者：

VANGELDER, W

HAUSER, VE

机构：

来源：

关键词：

D O I：

10.1149/1.2426757

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：869 / +

页数：1

相关论文

共 7 条

[1] VAPOR PRESSURE OF PHOSPHORIC ACIDS
BROWN, EH
WHITT, CD
[J]. INDUSTRIAL AND ENGINEERING CHEMISTRY, 1952, 44 (03): : 615 - 618
[2] DALTON JV, 1966, MAT CLEV M SOC
[3] ERDMAN WC, 1966, OCT PHIL M SOC
[4] FINNE RM, 1964, MAY TOR M SOC
[5] OBSERVATION OF ETCHING OF N-TYPE SILICON IN AQUEOUS HF SOLUTIONS
HU, SM
KERR, DR
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (04) : 414 - &
[6] KIRKOTHMER, ENCYCLOPEDIAN CHEMIC
[7] REIZMAN F, TO BE PUBLISHED