ULTRAFAST (UP TO 39 GHZ) RELAXATION OSCILLATION OF VERTICAL CAVITY SURFACE EMITTING LASER

被引:15
作者
LIN, J
GAMELIN, JK
LAU, KY
WANG, S
HONG, M
MANNAERTS, JP
机构
[1] UNIV CALIF BERKELEY,ELECTR SECT,BERKELEY,CA 94720
[2] AT&T BELL LABS,MURRAY HILL,NJ 07974
关键词
D O I
10.1063/1.107457
中图分类号
O59 [应用物理学];
学科分类号
摘要
Relaxation oscillation of frequency as high as 39 GHz has been observed in a surface emitting laser (SELD). The correlation between the observed relaxation oscillation and the modulation bandwidth was studied. The experimental results suggest that SELDs have the potential to operate at several times the highest modulation speed achieved so far.
引用
收藏
页码:15 / 17
页数:3
相关论文
共 7 条
[1]   MICROCAVITY GAALAS/GAAS SURFACE-EMITTING LASER WITH ITH=6MA [J].
IGA, K ;
KINOSHITA, S ;
KOYAMA, F .
ELECTRONICS LETTERS, 1987, 23 (03) :134-136
[2]   LOW-THRESHOLD ELECTRICALLY PUMPED VERTICAL-CAVITY SURFACE-EMITTING MICROLASERS [J].
JEWELL, JL ;
SCHERER, A ;
MCCALL, SL ;
LEE, YH ;
WALKER, S ;
HARBISON, JP ;
FLOREZ, LT .
ELECTRONICS LETTERS, 1989, 25 (17) :1123-1124
[3]   SURFACE-EMITTING MICROLASERS FOR PHOTONIC SWITCHING AND INTERCHIP CONNECTIONS [J].
JEWELL, JL ;
LEE, YH ;
SCHERER, A ;
MCCALL, SL ;
OLSSON, NA ;
HARBISON, JP ;
FLOREZ, LT .
OPTICAL ENGINEERING, 1990, 29 (03) :210-214
[4]   GENERATION OF PICOSECOND PULSES WITH A GAIN-SWITCHED GAAS SURFACE-EMITTING LASER [J].
KARIN, JR ;
MELCER, LG ;
NAGARAJAN, R ;
BOWERS, JE ;
CORZINE, SW ;
MORTON, PA ;
GEELS, RS ;
COLDREN, LA .
APPLIED PHYSICS LETTERS, 1990, 57 (10) :963-965
[5]  
LAU KY, 1984, SEMICONDUCTORS SEMIM, V22, pCH2
[6]  
LIN J, 1990, C LASERS ELECTRO OPT
[7]   HIGH-SPEED MODULATION OF SEMICONDUCTOR-LASERS [J].
TUCKER, RS .
JOURNAL OF LIGHTWAVE TECHNOLOGY, 1985, 3 (06) :1180-1192