POWER DMOS FOR HIGH-FREQUENCY AND SWITCHING APPLICATIONS

被引:17
作者
FONG, E
PITZER, DC
ZEMAN, RJ
机构
关键词
D O I
10.1109/T-ED.1980.19862
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:322 / 330
页数:9
相关论文
共 16 条
[1]  
ANDERSON RW, 1967, HEWLETT PACKARD FEB
[2]  
CHUANG PT, 1975, THESIS UC BERKELEY
[3]   AVALANCHE BREAKDOWN IN HIGH-VOLTAGE D-MOS DEVICES [J].
DECLERCQ, MJ ;
PLUMMER, JD .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (01) :1-4
[4]  
EVANS AD, 1978, ELECTRON JUN, P105
[5]  
HOFSTEIN SR, 1966, FIELD EFFECT TRANSIS
[6]   CHARGE CONTROL APPROACH TO SMALL SIGNAL THEORY OF FIELD-EFFECT DEVICES [J].
HUANG, JST .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (09) :775-+
[7]   SLIC - SIMULATOR FOR LINEAR INTEGRATED CIRCUITS [J].
IDLEMAN, TE ;
JENKINS, FS ;
MCCALLA, WJ ;
PEDERSON, DO .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1971, SC 6 (04) :188-&
[8]  
JOHNSON EO, 1965, RCA REV JUN, P163
[9]  
MULLER RS, 1977, DEVICE ELECTRONICS I
[10]   TRADEOFF BETWEEN THRESHOLD VOLTAGE AND BREAKDOWN IN HIGH-VOLTAGE DOUBLE-DIFFUSED MOS-TRANSISTORS [J].
POCHA, MD ;
PLUMMER, JD ;
MEINDL, JD .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (11) :1325-1327