LIQUID-PHASE EPITAXIAL-GROWTH OF PB1-YSNYSE

被引：10

作者：

KASAI, I ^{[1
]}

BASSETT, DW ^{[1
]}

机构：

[1] AEG TELEFUNKEN,FORSCH INST,GOLDSTEIN STR 235,6 FRANKFURT 71,FED REP GER

来源：

JOURNAL OF CRYSTAL GROWTH | 1974年 / 27卷 / DEC期

关键词：

D O I：

10.1016/0022-0248(74)90435-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：215 / 220

页数：6

共 17 条

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[4] DETERMINATION OF UNDERCOOLING NECESSARY TO INITIATE EPITAXIAL-GROWTH OF GAAS FROM SOLUTION IN GA [J].

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SMALL, MB .

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[5]

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[6]

HARMAN TC, 1971, PHYSICS SEMIMETALS N, P363

[7]

HARMAN TC, 1972, J NONMETALS, V1

[8] IMPROVED SURFACE QUALITY OF SOLUTION GROWN GAAS AND PB1-XSNXTE EPITAXIAL LAYERS - NEW TECHNIQUE [J].

LONGO, JT ;

HARRIS, JS ;

CHU, JC ;

GERTNER, ER .

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[9]

LONGO JT, 1972, J NONMETALS, V1

[10] TEMPERATURE GRADIENT CELL FOR LIQUID-PHASE EPITAXIAL-GROWTH OF GAAS [J].

MATTES, BL ;

ROUTE, RK .

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