THE INFLUENCE OF THE SEMICONDUCTOR AND DIELECTRIC-PROPERTIES ON SURFACE FLASHOVER IN SILICON-DIELECTRIC SYSTEMS

被引：10

作者：

GRADINARU, G

MADANGARLI, VP

SUDARSHAN, TS

机构：

[1] Department of Electrical and Computer Engineering, University of South Carolina, Columbia

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1994年 / 41卷 / 07期

关键词：

D O I：

10.1109/16.293353

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

New experimental results on surface flashover are reported for high field silicon-dielectric systems. Different conditions of the lateral surface, contacts and ambient dielectrics have been studied. The strong influence of the semiconductor quality, and that of the dielectric properties, on the prebreakdown and breakdown response of the system, is demonstrated. All experimental results strongly support the conclusion that surface flashover in silicon systems is a physical process totally different from semiconductor surface breakdown. This conclusion has important practical application in the improvement of the performance of photoconductive power switches, severely limited by premature breakdown effects.

引用

页码：1233 / 1238

页数：6

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