EFFECTS OF TEMPERATURE ON CONTACT RESISTANCE OF GUNN DIODES

被引：16

作者：

BOLTON, RMG

JONES, BF

机构：

[1] University of Oxford Department of Engineering Science, Oxford, Parks Road

来源：

ELECTRONICS LETTERS | 1969年 / 5卷 / 25期

关键词：

D O I：

10.1049/el:19690495

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Two different sets of experiments on the effect of temperature on Gunn diodes with Ag-Sn metal contacts have indicated the presence of a contact resistance which can be characterised by an activation energy. A model based on the diffusion of copper into the active region is put forward to account for the origin of the contact resistance and its variation with temperature. © 1969, The Institution of Electrical Engineers. All rights reserved.

引用

页码：662 / +

页数：1

共 7 条

[1] THEORETICAL STUDY OF EFFECT OF TEMPERATURE ON XBAND GUNN OSCILLATORS
BOTT, IB
FAWCETT, W
[J]. ELECTRONICS LETTERS, 1968, 4 (10) : 207 - +
[2] PERFORMANCE OF X-BAND GUNN OSCILLATORS OVER TEMPERATURE RANGE 30 DEGREES C TO 120 DEGREES C
BOTT, IB
HOLLIDAY, HR
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (09) : 522 - +
[3] THEORETICAL STUDY OF A GUNN DIODE IN A RESONANT CIRCUIT
COPELAND, JA
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (02) : 55 - +
[4] EDDOLLS DV, 1966, SEP S GALL ARS READ
[5] DIFFUSION, SOLUBILITY, AND ELECTRICAL BEHAVIOR OF COPPER IN GALLIUM ARSENIDE
FULLER, CS
WHELAND, JM
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 6 (2-3) : 173 - &
[6] DIFFUSION + SOLUBILITY OF COPPER IN EXTRINSIC + INTRINSIC GERMANIUM SILICON + GALLIUM ARSENIDE
HALL, RN
RACETTE, JH
[J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (02) : 379 - &
[7] SPREADING RESISTANCE IN CYLINDRICAL SEMICONDUCTOR DEVICES
KENNEDY, DP
[J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (08) : 1490 - 1497

← 1 →