OBSERVATION OF A NEW AL(111)/SI(111) ORIENTATIONAL EPITAXY

被引：35

作者：

YAPSIR, AS ^{[1
]}

CHOI, CH ^{[1
]}

LU, TM ^{[1
]}

机构：

[1] RENSSELAER POLYTECH INST,DEPT PHYS,TROY,NY 12180

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 67卷 / 02期

关键词：

D O I：

10.1063/1.345734

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new Al(111)/Si(111) orientational epitaxy using x-ray pole figure analysis is reported. The new structure has a 19°rotation with respect to the parallel epitaxy. The results are explained using a geometrical lattice matching concept.

引用

页码：796 / 799

页数：4

共 11 条

[1] EPITAXIAL-GROWTH OF AL(111) SI(111) FILMS USING PARTIALLY IONIZED BEAM DEPOSITION
CHOI, CH
HARPER, RA
YAPSIR, AS
LU, TM
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (24) : 1992 - 1994
[2] DHEURLE F, 1968, T METALL SOC AIME, V242, P502
[3] CHANNELING STUDY OF STRUCTURAL EFFECTS AT THE AL(111)/SI(111) INTERFACE FORMED BY IONIZED CLUSTER BEAM DEPOSITION
JIN, HS
YAPSIR, AS
LU, TM
GIBSON, WM
YAMADA, I
TAKAGI, I
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (16) : 1062 - 1064
[4] KERN W, 1970, RCA REV, V31, P187
[5] ATOMIC-STRUCTURE OF THE EPITAXIAL AL-SI INTERFACE
LEGOUES, FK
KRAKOW, W
HO, PS
[J]. PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1986, 53 (06): : 833 - 841
[6] LEGOUES FK, 1985, LAYERED STRUCTURES E, V37, P395
[7] LEUNG S, 1983, MATER RES SOC S P, V18, P109
[8] DIRECT OBSERVATION OF AN INCOMMENSURATE SOLID-SOLID INTERFACE
LU, TM
BAI, P
YAPSIR, AS
CHANG, PH
SHAFFNER, TJ
[J]. PHYSICAL REVIEW B, 1989, 39 (13): : 9584 - 9586
[9] EPITAXIAL-GROWTH OF AL ON SI(111) AND SI(100) BY IONIZED-CLUSTER BEAM
YAMADA, I
INOKAWA, H
TAKAGI, T
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (10) : 2746 - 2750
[10] YAMADA I, 1985, JPN J APPL PHYS, V24, pL173

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