OBSERVATION OF A NEW AL(111)/SI(111) ORIENTATIONAL EPITAXY

被引:35
作者
YAPSIR, AS [1 ]
CHOI, CH [1 ]
LU, TM [1 ]
机构
[1] RENSSELAER POLYTECH INST,DEPT PHYS,TROY,NY 12180
关键词
D O I
10.1063/1.345734
中图分类号
O59 [应用物理学];
学科分类号
摘要
A new Al(111)/Si(111) orientational epitaxy using x-ray pole figure analysis is reported. The new structure has a 19°rotation with respect to the parallel epitaxy. The results are explained using a geometrical lattice matching concept.
引用
收藏
页码:796 / 799
页数:4
相关论文
共 11 条
  • [1] EPITAXIAL-GROWTH OF AL(111) SI(111) FILMS USING PARTIALLY IONIZED BEAM DEPOSITION
    CHOI, CH
    HARPER, RA
    YAPSIR, AS
    LU, TM
    [J]. APPLIED PHYSICS LETTERS, 1987, 51 (24) : 1992 - 1994
  • [2] DHEURLE F, 1968, T METALL SOC AIME, V242, P502
  • [3] CHANNELING STUDY OF STRUCTURAL EFFECTS AT THE AL(111)/SI(111) INTERFACE FORMED BY IONIZED CLUSTER BEAM DEPOSITION
    JIN, HS
    YAPSIR, AS
    LU, TM
    GIBSON, WM
    YAMADA, I
    TAKAGI, I
    [J]. APPLIED PHYSICS LETTERS, 1987, 50 (16) : 1062 - 1064
  • [4] KERN W, 1970, RCA REV, V31, P187
  • [5] ATOMIC-STRUCTURE OF THE EPITAXIAL AL-SI INTERFACE
    LEGOUES, FK
    KRAKOW, W
    HO, PS
    [J]. PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1986, 53 (06): : 833 - 841
  • [6] LEGOUES FK, 1985, LAYERED STRUCTURES E, V37, P395
  • [7] LEUNG S, 1983, MATER RES SOC S P, V18, P109
  • [8] DIRECT OBSERVATION OF AN INCOMMENSURATE SOLID-SOLID INTERFACE
    LU, TM
    BAI, P
    YAPSIR, AS
    CHANG, PH
    SHAFFNER, TJ
    [J]. PHYSICAL REVIEW B, 1989, 39 (13): : 9584 - 9586
  • [9] EPITAXIAL-GROWTH OF AL ON SI(111) AND SI(100) BY IONIZED-CLUSTER BEAM
    YAMADA, I
    INOKAWA, H
    TAKAGI, T
    [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (10) : 2746 - 2750
  • [10] YAMADA I, 1985, JPN J APPL PHYS, V24, pL173