EPITAXIAL-GROWTH OF AL ON SI(111) AND SI(100) BY IONIZED-CLUSTER BEAM

[1] HILLOCK GROWTH IN THIN-FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (10) : 4339 - 4346

[2] Chu W.-K., 1978, BACKSCATTERING SPECT, P223

[3] d'Heurle F. M., 1978, Thin films. Interdiffusion and reactions, P243

[4] OPTICAL CONSTANTS AND REFLECTANCE AND TRANSMITTANCE OF EVAPORATED ALUMINUM IN VISIBLE AND ULTRAVIOLET [J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1961, 51 (07) : 719 - &

[5] MICRO-PROBE REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION TECHNIQUE .2. OBSERVATION OF ALUMINUM EPITAXIAL-GROWTH ON A POLYCRYSTAL-SILICON SURFACE BY VACUUM EVAPORATION [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (01): : 154 - 163

[6] SURFACE REACTIONS OF SILICON WITH ALUMINUM AND WITH INDIUM [J]. SURFACE SCIENCE, 1964, 2 : 553 - 565

[7] EVOLUTION AND CURRENT STATUS OF ALUMINUM METALLIZATION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (06) : 894 - 906

[8] RESISTANCE INCREASE IN SMALL-AREA SI-DOPED AL-N-SI CONTACTS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (02) : 81 - 86

[9] EFFECT OF GROWTH TEMPERATURE ON SI MBE FILM [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (04) : 703 - 708

[10] ION-SURFACE INTERACTIONS DURING THIN-FILM DEPOSITION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02): : 382 - 388

[1] HILLOCK GROWTH IN THIN-FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (10) : 4339 - 4346

[2] Chu W.-K., 1978, BACKSCATTERING SPECT, P223

[3] d'Heurle F. M., 1978, Thin films. Interdiffusion and reactions, P243

[4] OPTICAL CONSTANTS AND REFLECTANCE AND TRANSMITTANCE OF EVAPORATED ALUMINUM IN VISIBLE AND ULTRAVIOLET [J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1961, 51 (07) : 719 - &

[5] MICRO-PROBE REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION TECHNIQUE .2. OBSERVATION OF ALUMINUM EPITAXIAL-GROWTH ON A POLYCRYSTAL-SILICON SURFACE BY VACUUM EVAPORATION [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (01): : 154 - 163

[6] SURFACE REACTIONS OF SILICON WITH ALUMINUM AND WITH INDIUM [J]. SURFACE SCIENCE, 1964, 2 : 553 - 565

[7] EVOLUTION AND CURRENT STATUS OF ALUMINUM METALLIZATION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (06) : 894 - 906

[8] RESISTANCE INCREASE IN SMALL-AREA SI-DOPED AL-N-SI CONTACTS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (02) : 81 - 86

[9] EFFECT OF GROWTH TEMPERATURE ON SI MBE FILM [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (04) : 703 - 708

[10] ION-SURFACE INTERACTIONS DURING THIN-FILM DEPOSITION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02): : 382 - 388