RESISTANCE INCREASE IN SMALL-AREA SI-DOPED AL-N-SI CONTACTS

[1] DIFFUSION OF DONOR AND ACCEPTOR ELEMENTS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1956, 27 (05) : 544 - 553

[2] FULLER CS, 1956, J APPL PHYS, V25, P1439

[3] LARGE-AREA UNIFORM GROWTH OF (100) SI THROUGH AL FILM BY SOLID EPITAXY [J]. APPLIED PHYSICS LETTERS, 1977, 31 (02) : 125 - 126

[4] DIFFUSIVITY AND SOLUBILITY OF SI IN AL METALLIZATION OF INTEGRATED CIRCUITS [J]. APPLIED PHYSICS LETTERS, 1971, 19 (12) : 524 - &

[5] FAILURE OF ALUMINIUM CONTACTS TO SILICON IN SHALLOW DIFFUSED TRANSISTORS [J]. MICROELECTRONICS RELIABILITY, 1970, 9 (02) : 187 - &

[6] X-RAY EXTINCTION CONTRAST TOPOGRAPHY OF SILICON STRAINED BY THIN SURFACE FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (10) : 3162 - &

[7] MORI M, 1979, IECE TGSSD7967 TECHN

[8] NAGASAWA E, 1980, NEC RES DEV, P1

[9] INTERACTION OF AL LAYERS WITH POLYCRYSTALLINE SI [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (11) : 4678 - 4684

[10] SIRTL E, 1961, Z METALLKD, V52, P529

[1] DIFFUSION OF DONOR AND ACCEPTOR ELEMENTS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1956, 27 (05) : 544 - 553

[2] FULLER CS, 1956, J APPL PHYS, V25, P1439

[3] LARGE-AREA UNIFORM GROWTH OF (100) SI THROUGH AL FILM BY SOLID EPITAXY [J]. APPLIED PHYSICS LETTERS, 1977, 31 (02) : 125 - 126

[4] DIFFUSIVITY AND SOLUBILITY OF SI IN AL METALLIZATION OF INTEGRATED CIRCUITS [J]. APPLIED PHYSICS LETTERS, 1971, 19 (12) : 524 - &

[5] FAILURE OF ALUMINIUM CONTACTS TO SILICON IN SHALLOW DIFFUSED TRANSISTORS [J]. MICROELECTRONICS RELIABILITY, 1970, 9 (02) : 187 - &

[6] X-RAY EXTINCTION CONTRAST TOPOGRAPHY OF SILICON STRAINED BY THIN SURFACE FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (10) : 3162 - &

[7] MORI M, 1979, IECE TGSSD7967 TECHN

[8] NAGASAWA E, 1980, NEC RES DEV, P1

[9] INTERACTION OF AL LAYERS WITH POLYCRYSTALLINE SI [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (11) : 4678 - 4684

[10] SIRTL E, 1961, Z METALLKD, V52, P529