EVOLUTION AND CURRENT STATUS OF ALUMINUM METALLIZATION

被引:90
作者
LEARN, AJ [1 ]
机构
[1] FAIRCHILD CAMERA & INSTR CORP, RES & DEV LAB, PALO ALTO, CA 94304 USA
关键词
D O I
10.1149/1.2132964
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:894 / 906
页数:13
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[1]   ELECTROMIGRATION-INDUCED FAILURES IN THIN-FILM AL-CU CONDUCTORS [J].
AGARWALA, BN ;
BERENBAUM, L ;
PERESSININ, P .
JOURNAL OF ELECTRONIC MATERIALS, 1974, 3 (01) :137-153
[2]   EFFECT OF MICROSTRUCTURE ON ELECTROMIGRATION LIFE OF THIN-FILM AL-CU CONDUCTORS [J].
AGARWALA, BN ;
PATNAIK, B ;
SCHNITZE.R .
JOURNAL OF APPLIED PHYSICS, 1972, 43 (04) :1487-&
[3]   DEPENDENCE OF ELECTROMIGRATION-INDUCED FAILURE TIME ON LENGTH AND WIDTH OF ALUMINUM THIN-FILM CONDUCTORS [J].
AGARWALA, BN ;
ATTARDO, MJ ;
INGRAHAM, AP .
JOURNAL OF APPLIED PHYSICS, 1970, 41 (10) :3954-&
[4]   BEVELING ALUMINUM IN MULTILAYER METAL CIRCUITRY [J].
AGATSUMA, T ;
KIKUCHI, A ;
NAKADA, K ;
TOMOZAWA, A .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (06) :825-829
[5]   COATING, MECHANICAL CONSTRAINTS, AND PRESSURE EFFECTS ON ELECTROMIGRATION [J].
AINSLIE, NG ;
WELLS, OC ;
DHEURLE, FM .
APPLIED PHYSICS LETTERS, 1972, 20 (04) :173-&
[6]   CRUCIBLE TYPE EVAPORATION SOURCE FOR ALUMINUM [J].
AMES, I ;
KAPLAN, LH ;
ROLAND, PA .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1966, 37 (12) :1737-&
[7]   REDUCTION OF ELECTROMIGRATION IN ALUMINUM FILMS BY COPPER DOPING [J].
AMES, I ;
DHEURLE, FM ;
HORSTMANN, RE .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (04) :461-+
[8]   APPLICATIONS OF THIN-FILMS IN MICROELECTRONICS [J].
ANDERSON, JC .
THIN SOLID FILMS, 1972, 12 (01) :1-&
[9]   TECHNIQUE FOR CONNECTING ELECTRICAL LEADS TO SEMICONDUCTORS [J].
ANDERSON, OL ;
CHRISTENSEN, H ;
ANDREATCH, P .
JOURNAL OF APPLIED PHYSICS, 1957, 28 (08) :923-923
[10]   REVERSE CURRENT-VOLTAGE CHARACTERISTICS OF METAL-SILICIDE SCHOTTKY DIODES [J].
ANDREWS, JM ;
LEPSELTER, MP .
SOLID-STATE ELECTRONICS, 1970, 13 (07) :1011-+