PICOSECOND STEP-FUNCTION RESPONSE OF INPLANE GATE TRANSISTORS

被引：1

作者：

KLINGENSTEIN, M

KUHL, J

PLOOG, K

WIECK, AD

机构：

[1] PAUL DRUDE INST FESTKORPERELEKTR,D-10117 BERLIN,GERMANY

[2] RUHR UNIV BOCHUM,LEHRST F ANGEW FESTKORPERPHYS,D-44780 BOCHUM,GERMANY

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1995年 / 10卷 / 08期

关键词：

D O I：

10.1088/0268-1242/10/8/018

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The high-frequency response of an in-plane gate transistor has been analysed by time-domain transmission measurements using a 20 GHz sampling oscilloscope. Application of a step pulse with 20 ps rise time to the gate of the transistor results in a drain-source current with a rise time of approximately 50 ps, Comparison with the estimated carrier transit time through the channel and with the RC time constant of the device reveals the dominant influence of the parasitic capacitance and the channel resistance on the measured response time.

引用

页码：1156 / 1158

页数：3

共 5 条

[1]

BEVER T, 1992, THESIS U STUTTGART

[2] HIGH-FREQUENCY CHARACTERISTICS OF IN-PLANE-GATE TRANSISTORS [J].