HIGH-FREQUENCY PROPERTIES OF YBCO BRIDGES FABRICATED BY MOCVD

被引:8
作者
CHEN, J
YAMASHITA, T
SUZUKI, H
KUROSAWA, H
YAMANE, H
HIRAI, T
机构
[1] RIKEN CORP,KUMAGAYA 360,JAPAN
[2] TOHOKU UNIV,INST MAT RES,SENDAI,MIYAGI 980,JAPAN
关键词
D O I
10.1109/20.133920
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report on the high frequency properties of YBCO bridges at 4.2K and 77K. The YBCO films were prepared by MOCVD. For small bridges with the width(w) of about 1-mu-m and thickness(t) of less than 0.5-mu-m, the constant voltage steps at integral multiples of PHI-(o)fr = 20-mu-V were observed up to 1mV, which is much higher than the IcR(N)(< 0.13mV) product of these bridges at 77K. The magnitudes of the current steps as functions of the rf current at 4. 2K and 77K were in quantitative agreement with the theoretical results based on the RSJ model. The dc SQUIDs with these small bridges had a good response to external magnetic flux, resulting in a sinusoidal current-phase relation. On the other hand, for large bridges of w > 5-mu-m and t = 1-mu-m, the chaotic I-V characteristic was observed, and the shape of chaotic I-V curve was in qualitative agreement with the simulating results based on an RSCJ model.
引用
收藏
页码:3308 / 3311
页数:4
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