MONTE-CARLO STUDY OF ELECTRON-TRANSPORT IN STRAINED SILICON-CARBON ALLOY

被引：20

作者：

ERSHOV, M

RYZHII, V

机构：

[1] Computer Solid State Physics Laboratory, University of Aizu

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 76卷 / 03期

关键词：

D O I：

10.1063/1.357676

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electron transport characteristics of strained Si1-yCy random alloy grown on a Si (100) substrate are studied theoretically using the Monte Carlo technique. The value of alloy scattering potential has a strong influence on the low-field electron mobility. Valley repopulation effect combined with decreased scattering rate of electrons in strained Si1-yCy material can give rise to the increase of in-plane drift electron velocity with carbon concentration, in spite of the enhancement of alloy scattering. Electron transport characteristics have been calculated over a wide range of electric fields and tem

引用

页码：1924 / 1926

页数：3

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