EXCIMER LASER MIXING OF TI LAYERS ON SI3N4 CERAMIC SUBSTRATES

被引：10

作者：

JERVIS, TR ^{[1
]}

NASTASI, M ^{[1
]}

HUBBARD, KM ^{[1
]}

机构：

[1] UNIV CALIF LOS ALAMOS SCI LAB,DIV MAT SCI & TECHNOL,LOS ALAMOS,NM 87545

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 07期

关键词：

D O I：

10.1063/1.107436

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have used pulsed excimer laser radiation at 248 nm to mix Ti layers into Si3N4 substrates. Mixed layers show formation of small grain TiN in a Si3N4 but no evidence of Ti-Si compounds or free Si. Low fluence (approximately 1.0 J cm-2) processing results in minimal mixing as TiN formation at the interface impedes further diffusion. At higher fluence (> 2 J cm-2) complete and quite uniform mixing occurs. The mixed layer is of the order of 0.5-mu-m thick.

引用

页码：912 / 914

页数：3

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