PB1-XEUXS FILMS PREPARED BY HOT WALL EPITAXY

被引：15

作者：

ISHIDA, A

NAKAHARA, N

OKAMURA, T

SASE, Y

FUJIYASU, H

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 04期

关键词：

D O I：

10.1063/1.100592

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：274 / 275

页数：2

共 9 条

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[2]

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[3]

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[4] PROPERTIES OF PB1-XEUXTE FILMS PREPARED BY HOT-WALL EPITAXY [J].

ISHIDA, A ;

MATSUURA, S ;

MIZUNO, M ;

SASE, Y ;

FUJIYASU, H .

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[5] ELECTRONIC-STRUCTURE STUDY OF EUROPIUM CHALCOGENIDES BY SOFT-X-RAY SPECTROSCOPY [J].

MARIOT, JM ;

KARNATAK, RC .

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[6] WAVELENGTH COVERAGE OF LEAD-EUROPIUM-SELENIDE-TELLURIDE DIODE-LASERS [J].

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[7] LEAD SALT QUANTUM WELL DIODE-LASERS [J].

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[8] RECENT ADVANCES IN LEAD-CHALCOGENIDE DIODE-LASERS [J].

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APPLIED PHYSICS, 1979, 20 (03) :189-206

[9]

Samokhvalov A. A., 1975, Soviet Physics - Solid State, V17, P26

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