WAVELENGTH COVERAGE OF LEAD-EUROPIUM-SELENIDE-TELLURIDE DIODE-LASERS

[1] HESSE J, 1975, ADV SOLID STATE PHYS, P229

[2] Kaldis E., 1978, Izvestiya po Khimiya Bulgarska Akademiya na Naukite, V11, P431

[3] LINDEN KJ, 1983, AUG SPIE C TUN DIOD

[4] GROWTH OF LEAD-GERMANIUM-TELLURIDE THIN-FILM STRUCTURES BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (01): : 1 - 5

[5] MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF LEAD-TELLURIDE FOR LASER-DIODES [J]. JOURNAL OF ELECTRONIC MATERIALS, 1981, 10 (02) : 313 - 325

[6] DIODE-LASERS OF LEAD-EUROPIUM-SELENIDE-TELLURIDE GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1983, 43 (11) : 996 - 997

[7] PARTIN DL, 1983, AUG SPIE C TUN DIOD

[8] PARTIN DL, UNPUB

[9] RECENT ADVANCES IN LEAD-CHALCOGENIDE DIODE-LASERS [J]. APPLIED PHYSICS, 1979, 20 (03): : 189 - 206

[10] LOW CARRIER CONCENTRATION (PBSN)TE BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF ELECTRONIC MATERIALS, 1976, 5 (02) : 247 - 261

[1] HESSE J, 1975, ADV SOLID STATE PHYS, P229

[2] Kaldis E., 1978, Izvestiya po Khimiya Bulgarska Akademiya na Naukite, V11, P431

[3] LINDEN KJ, 1983, AUG SPIE C TUN DIOD

[4] GROWTH OF LEAD-GERMANIUM-TELLURIDE THIN-FILM STRUCTURES BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (01): : 1 - 5

[5] MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF LEAD-TELLURIDE FOR LASER-DIODES [J]. JOURNAL OF ELECTRONIC MATERIALS, 1981, 10 (02) : 313 - 325

[6] DIODE-LASERS OF LEAD-EUROPIUM-SELENIDE-TELLURIDE GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1983, 43 (11) : 996 - 997

[7] PARTIN DL, 1983, AUG SPIE C TUN DIOD

[8] PARTIN DL, UNPUB

[9] RECENT ADVANCES IN LEAD-CHALCOGENIDE DIODE-LASERS [J]. APPLIED PHYSICS, 1979, 20 (03): : 189 - 206

[10] LOW CARRIER CONCENTRATION (PBSN)TE BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF ELECTRONIC MATERIALS, 1976, 5 (02) : 247 - 261