DIODE-LASERS OF LEAD-EUROPIUM-SELENIDE-TELLURIDE GROWN BY MOLECULAR-BEAM EPITAXY

[1] Calawa A. R., 1973, Journal of Luminescence, V7, P477, DOI 10.1016/0022-2313(73)90080-X

[2] LEAD RARE-EARTH CHALCOGENIDES GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02): : 174 - 177

[3] GROWTH OF LEAD-GERMANIUM-TELLURIDE THIN-FILM STRUCTURES BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (01): : 1 - 5

[4] MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF LEAD-TELLURIDE FOR LASER-DIODES [J]. JOURNAL OF ELECTRONIC MATERIALS, 1981, 10 (02) : 313 - 325

[5] PARTIN DL, J APPL PHYS

[6] PARTIN DL, UNPUB

[7] DOUBLE HETEROJUNCTION PBS-PBS1-XSEX-PBS LASER-DIODES WITH CW OPERATION UP TO 96-K [J]. APPLIED PHYSICS LETTERS, 1976, 28 (11) : 669 - 671

[8] RECENT ADVANCES IN LEAD-CHALCOGENIDE DIODE-LASERS [J]. APPLIED PHYSICS, 1979, 20 (03): : 189 - 206

[1] Calawa A. R., 1973, Journal of Luminescence, V7, P477, DOI 10.1016/0022-2313(73)90080-X

[2] LEAD RARE-EARTH CHALCOGENIDES GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02): : 174 - 177

[3] GROWTH OF LEAD-GERMANIUM-TELLURIDE THIN-FILM STRUCTURES BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (01): : 1 - 5

[4] MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF LEAD-TELLURIDE FOR LASER-DIODES [J]. JOURNAL OF ELECTRONIC MATERIALS, 1981, 10 (02) : 313 - 325

[5] PARTIN DL, J APPL PHYS

[6] PARTIN DL, UNPUB

[7] DOUBLE HETEROJUNCTION PBS-PBS1-XSEX-PBS LASER-DIODES WITH CW OPERATION UP TO 96-K [J]. APPLIED PHYSICS LETTERS, 1976, 28 (11) : 669 - 671

[8] RECENT ADVANCES IN LEAD-CHALCOGENIDE DIODE-LASERS [J]. APPLIED PHYSICS, 1979, 20 (03): : 189 - 206