GROWTH OF LEAD-GERMANIUM-TELLURIDE THIN-FILM STRUCTURES BY MOLECULAR-BEAM EPITAXY

被引：34

作者：

PARTIN, DL

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1982年 / 21卷 / 01期

关键词：

Compendex;

D O I：

10.1116/1.571714

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Semiconducting lead compounds

引用

页码：1 / 5

页数：5

共 27 条

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