LEAD RARE-EARTH CHALCOGENIDES GROWN BY MOLECULAR-BEAM EPITAXY

被引：19

作者：

PARTIN, DL

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1983年 / 1卷 / 02期

关键词：

D O I：

10.1116/1.582527

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：174 / 177

页数：4

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[8] GROWTH OF LEAD-GERMANIUM-TELLURIDE THIN-FILM STRUCTURES BY MOLECULAR-BEAM EPITAXY [J].

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[9] MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF LEAD-TELLURIDE FOR LASER-DIODES [J].

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