CURRENT OSCILLATIONS IN SI P-I-N DEVICES AFTER IRRADIATION WITH ONE-MEV ELECTRONS

被引：8

作者：

STREETMAN, BG

HOLONYAK, N

KRONE, HV

COMPTON, WD

机构：

[1] Department of Electrical Engineering, Materials Research Laboratory, University of Illinois, Urbana

[2] Coordinated Science Laboratory, University of Illinois at Urbana-Champaign, Urbana

来源：

APPLIED PHYSICS LETTERS | 1969年 / 14卷 / 02期

关键词：

D O I：

10.1063/1.1652714

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Current oscillations similar to those previously reported in various semiconductors with impurity-induced traps have been observed in Si irradiated at 0°C with 1-MeV electrons. The oscillations are altered by annealing of the devices at temperatures below 0°C. © 1969 The American Institute of Physics.

引用

页码：63 / +

页数：1

共 9 条

[1] BERKOVSK.FM, 1967, FIZ TVERD TELA+, V8, P1580
[2] CRAWFORD JH, 1964, INTERACTION RADIATIO, P421
[3] RECOMBINATION LIFETIMES IN GAMMA-IRRADIATED SILICON
HEWES, RA
[J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (09) : 4106 - &
[4] OSCILLATIONS IN SEMICONDUCTORS DUE TO DEEP LEVELS
HOLONYAK, N
BEVACQUA, SF
[J]. APPLIED PHYSICS LETTERS, 1963, 2 (04) : 71 - 73
[5] KONSTANTINOV OV, 1968, SOV PHYS-SOLID STATE, V10, P686
[6] SPACE CHARGE AND OSCILLATION EFFECTS IN GOLD-DOPED SILICON P-I-N DIODES
MOORE, JS
HOLONYAK, N
SIRKIS, MD
[J]. SOLID-STATE ELECTRONICS, 1967, 10 (08) : 823 - &
[7] SAITO H, 1963, JPN J APPL PHYS, V2, P678
[8] CURRENT OSCILLATIONS IN CO-DOPED SI P-I-N STRUCTURES
STREETMAN, BG
BLOUKE, MM
HOLONYAK, N
[J]. APPLIED PHYSICS LETTERS, 1967, 11 (06) : 200 - +
[9] STRUMANE R, 1964, INTERACTION RADIA ED, P421

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