CURRENT OSCILLATIONS IN CO-DOPED SI P-I-N STRUCTURES

被引：22

作者：

STREETMAN, BG

BLOUKE, MM

HOLONYAK, N

机构：

来源：

关键词：

D O I：

10.1063/1.1755096

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：200 / +

页数：1

共 7 条

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[2] GOLD AS A RECOMBINATION CENTRE IN SILICON
FAIRFIELD, JM
GOKHALE, BV
[J]. SOLID-STATE ELECTRONICS, 1965, 8 (08) : 685 - +
[3] OSCILLATIONS IN SEMICONDUCTORS DUE TO DEEP LEVELS
HOLONYAK, N
BEVACQUA, SF
[J]. APPLIED PHYSICS LETTERS, 1963, 2 (04) : 71 - 73
[4] MOORE JH, TO BE PUBLISHED
[5] MOORE JH, PRIVATE COMMUNICATIO
[6] SPACE-CHARGE RECOMBINATION OSCILLATIONS IN SILICON
MOORE, JS
HOLONYAK, N
SIRKIS, MD
BLOUKE, MM
[J]. APPLIED PHYSICS LETTERS, 1967, 10 (02) : 58 - &
[7] ENERGY LEVELS AND NEGATIVE PHOTOCONDUCTIVITY IN COBALT-DOPED SILICON
PENCHINA, CM
MOORE, JS
HOLONYAK, N
[J]. PHYSICAL REVIEW, 1966, 143 (02): : 634 - &